ALISO VIEJO, Calif., Nov. 2, 2011 /PRNewswire/ -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced a DDR3 SDRAM memory device that is the first of its kind to be packaged in a single plastic ball grid array (PBGA) and offered as a compact x64/x72 unregistered dual in-line memory module (UDIMM )/small outline dual in-line memory module (SODIMM). The solution provides up to 4GByte compact memory densities that support high-performance processors and chipsets in mission-critical applications such as avionics, UAVs, missile systems and other defense applications that require
high reliability in harsh environments.
"With this expansion of Microsemi's DDR3 SDRAM family, we are able to provide a full range of high-performance memory products for today's demanding military applications," said Jack Bogdanski, director of marketing for Microsemi. "Product designers also benefit from the high-density packaging as it saves board space. This enables designers to include additional features and functionality into existing designs."
Microsemi's commercial off-the-shelf (COTS) DDR3 SDRAM devices give customers a standalone, high-density memory solution that also meets the data widths necessary for many applications. The DDR3 devices significantly reduce space requirements as compared to systems built from discrete memory components, and also use less board space than memory solutions using chip scale packages (CSPs) and other single-die solutions. Microsemi's memory devices also streamline I/O routing and reduce component count and placements while delivering superior signal integrity.
Key features include:
- Measures only 23 mm x 32 mm, on 1mm pitch
- Available in a 543 PBGA package, with SnPb balls
- Offers 44 percent space savings and 23 percent reduced I/O routing as compared to solutions with similar capabilities built from discrete components
- Supports data rates of 800, 1,066 and 1,333 megabits per second (Mb/s)
- Operates on a 1.5 volt power supply
- Typically uses less power at the same data rate when compared to a DDR2 device
- Available in commercial and industrial temperature ranges
- Footprint compatible with Microsemi 1GByte and 2GByte devices
- Designed for DDR3 fly—by routing
- Address, command and clock terminations included
- RZQ calibration resistors included
- Built in decoupling
Microsemi's high-speed memories optimize performance by using a four ns-prefetch architecture with an interface that allows two data words to be transmitted per clock cycle. The devices can be ruggedized and processed for tamper resistance, and are offered in densities up to 4GByte in both 512Mx72 and 512Mx64 configurations. The company plans to offer a low-profile option that will be footprint-compatible with the current 375 PBGA package. All devices are subjected to extensive environmental and temperature testing.
For more information, call 602-458-3263.
Microsemi has full design, manufacture and test capabilities for a wide variety of multiple component packages (MCPs), COTS memory, processors and combination MCPs for demanding applications. These products can also be ruggedized and processed for tamper resistance.
Microsemi's facility in Phoenix, Ariz. is a DOD Trusted Source and DMEA accredited for assembly and test. Its quality and inspection system requirements are certified to MIL-PRF-38534 Class H and K, MIL-PRF-38535 Class B, ISO 9001:2008 and AS9100.
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor solutions for: aerospace, defense and security; enterprise and communications; and industrial and alternative energy markets. Products include high-performance, high-reliability analog and RF devices, mixed-signal and RF integrated circuits, customizable SoCs, FPGAs, and complete subsystems. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more at www.microsemi.com.
Microsemi and the Microsemi logo are registered trademarks or service marks of Microsemi Corporation and/or its affiliates. Third-party trademarks and service marks mentioned herein are the property of their respective owners.
"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Any statements set forth in this news release that are not entirely historical and factual in nature, including without limitation statements related to its new DDR3 SDRAM family, and its potential effects on future business, are forward-looking statements. These forward-looking statements are based on our current expectations and are inherently subject to risks and uncertainties that could cause actual results to differ materially from those expressed in the forward-looking statements. The potential risks and uncertainties include, but are not limited to, such factors as rapidly changing technology and product obsolescence, potential cost increases, variations in customer order preferences, weakness or competitive pricing environment of the marketplace, uncertain demand for and acceptance of the
company's products, adverse circumstances in any of our end markets, results of in-process or planned development or marketing and promotional campaigns, difficulties foreseeing future demand, potential non-realization of expected orders or non-realization of backlog, product returns, product liability, and other potential unexpected business and economic conditions or adverse changes in current or expected industry conditions, difficulties and costs of protecting patents and other proprietary rights, inventory obsolescence and difficulties regarding customer qualification of products. In addition to these factors and any other factors mentioned elsewhere in this news release, the reader should refer as well to the factors, uncertainties or risks identified in the company's most recent Form 10-K and all subsequent Form 10-Q reports filed by
Microsemi with the SEC. Additional risk factors may be identified from time to time in Microsemi's future filings. The forward-looking statements included in this release speak only as of the date hereof, and Microsemi does not undertake any obligation to update these forward-looking statements to reflect subsequent events or circumstances.
SOURCE Microsemi Corporation